Dry Etch RIE in ISO Class 5 Cleanroom

RIE, dry chemical plasma etching system for patterning layers on wafer surfaces. Wafer size 150 mm; reactive ion etching; gas supply: Ar, O₂, CF₄, CHF₃. Combined with Dry Etch ICP as a 2-chamber cluster; loadlock for single wafer or cassette station; vacuum transfer chamber; STS ASPECT cluster system. Share on