Dry Etch RIE (Metal) in ISO Class 5 Cleanroom

Dry chemical plasma etching system for patterning layers (metal etch) on wafer surfaces. Wafer size 150 mm; reactive ion etching; gas supply: CF₄, BCl₃, O₂. 2-chamber cluster; Loadlock for single wafers; BCl₃ punch-through and Cl₂ aluminium etch, CF₄ passivation chamber; Vacuum transfer chamber. Share on