Dry Etch ICP in ISO Class 5 Cleanroom

DRIE, dry chemical plasma etching system for patterning layers on wafer surfaces, trench etching, Bosch process. Wafer size 150 mm; inductively coupled plasma source; Gas supply: N₂, SF₆, O₂, Ar, He, C₄F₈. Combined with Dry Etch RIE as a 2-chamber cluster; loadlock for single wafer or cassette station; vacuum transfer chamber; STS ASPECT cluster system. Share on